Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

摘要

A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at approximate to 3.73 mu m with the bandwidth of 0.36 mu m in the experiment. High temperature stabilities are confirmed up to 500 and 1000 degrees C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN-insulator-TiN (TiN-metal-insulator-metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage.