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Synthesis and Surface Engineering of Complex Nanostructures by Atomic Layer Deposition

机译:原子层沉积法合成复杂纳米结构及其表面工程

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Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process extremely thin insulating layers (high-k oxides) onto large-area silicon substrates. ALD is also a key technology for the surface modification of complex nanostructured materials. After briefly introducing ALD, this Review will focus on the various aspects of nanomateri-als and their processing by ALD, including nanopores, nanowires and -tubes, nanopatterning and nanolaminates as well as low-temperature ALD for organic nanostructures and biomateri-als. Finally, selected examples will be given of device applications, illustrating recent innovative approaches of how ALD can be used in nanotechnology.
机译:原子层沉积(ALD)最近已成为半导体行业在大面积硅基板上共形处理极薄的绝缘层(高k氧化物)的首选方法。 ALD还是复杂纳米结构材料表面改性的关键技术。在简要介绍了ALD之后,本综述将重点关注纳米材料及其通过ALD进行处理的各个方面,包括纳米孔,纳米线和-管,纳米图案和纳米层压材料以及用于有机纳米结构和生物材料的低温ALD。最后,将给出设备应用的选定示例,说明ALD如何在纳米技术中使用的最新创新方法。

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