Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors

摘要

By experiment and supporting theory we demonstrate the facile modulation of the electronic contact-barrier across the junction between single wall carbon nanotubes (SWNTs) and two distinct organic semiconductors demonstrating a new realm of application for carbon nanotubes. We exploit this ability to enable two devices: a vertical field-effect transistor and a vertical light-emitting transistor. The vertical architecture, which is readily facilitated by the specific properties of the nanotubes, allows the use of low mobility semiconductors that would otherwise be considered unsuitable for field effect transistors, thereby expanding the range of potential active materials. For the light-emitting transistor the gate control should permit new pixel drive schemes and affords the potential for increased device lifetimes.