A Printed and Flexible Field-Effect Transistor Device with Nanoscale Zinc Oxide as Active Semiconductor Material

摘要

Since the development of the electronic transistor 60 years ago its technical utilization has revolutionized modern society. Consequent miniaturization was the key to this development. The challenge to develop flat printable electronics based on inorganic materials could give this area further input. It could be the basis for flexible displays or electronic paper when the active material is processable from solution, shows very good adherence to flexible substrates and excellent physical performance. To meet these challenges any material considered requires a tuned set of functional properties. In general inorganic semiconductors are in advantage over organic materials as far as their physical performance is concerned. However, often processing and adherence to substrates is a problem with inorganic semiconductors.