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Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z-contrast Imaging

机译:Z对比成像跨铁电/氧化物界面的极化和电场的原子分辨映射

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摘要

Polarization dynamics at the ferroelectric-metal interfaces is the dominant factor underpinning the functionality of ferroelectric devices including capacitors,~([1,2]) direct probe-based data storage,~([3]) field-effect transistors,~([4-5]) and tunneling barriers.~([6-9]) In particular, multiple theoretical studies have addressed the role of mesoscopic space-charge layers,~([10]) non-uniform polarization distributions,~([11]) and chemical bonding.~([12]) Gerra et al.~([13]) have shown theoretically that the planar corrugations responsible for the dipole moment can propagate from the ferroelectric to the oxide component, effectively smearing the distribution of polarization bound charge. Tsymbal et al.~([14,15]) have demonstrated the role of interface bonding on dipole formation, painting a complex picture of multiple charge and polarization driven interactions even at nominally simple interfaces. Pruneda et al.~([16]) have also demonstrated that ferrodistortive cation off-centering can arise near the surfaces of metallic oxides.
机译:铁电金属界面处的极化动力学是支撑铁电设备功能的主要因素,这些设备包括电容器,〜([1,2])直接基于探针的数据存储,〜([3])场效应晶体管,〜([ [4-5])和隧穿势垒。〜([6-9])特别是,许多理论研究都研究了介观空间电荷层,〜([10])非均匀极化分布,〜([11] ] []和化学键合。〜([12])Gerra等人[[13])从理论上证明,引起偶极矩的平面波纹可以从铁电体传播到氧化物成分,从而有效地涂抹了极化分布约束电荷。 Tsymbal等人[[14,15])证明了界面键合在偶极子形成中的作用,即使在名义上简单的界面下,也能描绘出由多重电荷和极化驱动的相互作用的复杂图景。 Pruneda等人[[16]]也证明了铁扭曲性阳离子偏心会出现在金属氧化物表面附近。

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  • 来源
    《Advanced Materials 》 |2011年第21期| p.2474-2479| 共6页
  • 作者单位

    Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, USA;

    Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, USA;

    V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41, pr. Nauki, 03028 Kiev, Ukraine;

    Faculty of Science and Technology MESA + Institute for Nanotechnology University of Twente P.O. BOX 217, 7500 AE, Enschede, The Netherlands,Department of Materials Science and Engineering and Department of Physics University of California Berkeley, California, 94720, USA;

    Department of Materials Science and Engineering National Chiao Tung University Hsinchu, Taiwan 30013, ROC;

    Department of Materials Science and Engineering and Department of Physics University of California Berkeley, California, 94720, USA;

    Department of Materials Science and Engineering and Department of Physics University of California Berkeley, California, 94720, USA;

    V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41, pr. Nauki, 03028 Kiev, Ukraine;

    V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41, pr. Nauki, 03028 Kiev, Ukraine;

    Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, USA;

    Oak Ridge National Laboratory Oak Ridge, Tennessee 37831, USA;

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