Interface polarization fluctuation effect of ferroelectric hafnium-zirconium-oxide ferroelectric memory with nearly ideal subthreshold slope

摘要

A nearly ideal subthreshold slope (SS ∼58mV/dec) and an ultralow off-state current of 10A/µm have been demonstrated in HfZrO ferroelectric memory. The interface states with slow relaxation time seemingly shows no significant impact for nanosecond ferroelectric switching, but output ΔV window during endurance cycling may be affected by interface polarization fluctuation.