Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors

摘要

Organic field-effect transistors (OFETs) are attractive building blocks for low-cost electronic devices such as radio-frequency identification (RFID) tags, sensors, electronic paper, and backplane circuits for active-matrix displays. Low-voltage operation of OFETs is necessary for practical applications, hence the need to develop gate dielectrics with a high areal capacitance. To this end, ultrathin dielectric layers have been demonstrated based on self-assembled-monolayer (SAM) chemistry. In these cases, the formation of the dielectric layer relies on specific surface chemistries and therefore these approaches may not be suitable for the deposition of blanket layers on arbitrary substrates. For the same reason, the robustness and yield may be problematic due to the critical roles that surface cleanliness and roughness play on binding.