Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways

摘要

Research on electronic devices formed via solution process approaches is a key part of next-generation processing methods. Unlike vacuum-based deposition techniques, liquid-phase starting materials support diverse device fabrication routes such as ink-jet, screen printing, slit coating, spray coating, and spin coating. Additionally, these techniques can be employed for selective deposition and the creating of various pattern shapes and the low cost of facilities and materials can save expense compared to vacuum infrastructure.