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Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping

机译:利用硒化碲化铋的拓扑能带效应通过等价掺杂大幅度提高热电性能

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摘要

Dilute isovalent sulfur doping simultaneously increases electrical conductivity and Seebeck coefficient in Bi2Te2Se nanoplates, and bulk pellets made from them. This unusual trend at high electron concentrations is underpinned by multifold increases in electron effective mass attributable to sulfur-induced band topology effects, providing a new way for accessing a high thermoelectric figure-of-merit in topological-insulator-based nanomaterials through doping.
机译:稀等价硫掺杂同时提高了Bi2Te2Se纳米板和由它们制成的大颗粒中的电导率和塞贝克系数。高电子浓度下的这种不寻常趋势被归因于硫诱导的能带拓扑效应的电子有效质量的倍增所支撑,这为通过掺杂获得基于拓扑绝缘子的纳米材料的高热电品质因数提供了新途径。

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  • 来源
    《Advanced Materials》 |2016年第30期|6436-6441|共6页
  • 作者单位

    Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;

    Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;

    Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;

    Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;

    Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;

    Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;

    Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;

    Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA;

    Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA;

    Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany|Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland;

    Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;

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