机译:利用硒化碲化铋的拓扑能带效应通过等价掺杂大幅度提高热电性能
Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;
Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;
Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;
Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;
Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;
Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;
Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany;
Rensselaer Polytech Inst, Dept Mech Aerosp & Nucl Engn, Troy, NY 12180 USA;
Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA;
Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany|Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland;
Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA;
机译:热电功率因数在异载硫掺杂铋锑碲化肽膜中的多变增强
机译:通过基础铋掺杂增强Cu_3SBSE_4化合物的热电性能
机译:石墨烯掺杂增强碲化铋-有机杂化膜的热电性能
机译:镍掺杂对硒化铋热电性能的影响
机译:拓扑绝缘子-硒化铋的电输运和石墨烯的热电性能
机译:n型碲化铋:硒化铋合金Bi2Te3-xSex的热电性质
机译:通过诸如异铋掺杂增强Cu3SbSe4化合物的热电性能