p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

著录项

• 来源
  《Advanced Materials》 |2016年第17期|3391-3398|共8页
• 作者

  Xue Fei; Chen Libo; Chen Jian; Liu Jingbin; Wang Longfei; Chen Mengxiao; Pang Yaokun; Yang Xiaonian; Gao Guoyun; Zhai Junyi; Wang Zhong Lin;

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• 作者单位

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China;

  Chinese Acad Sci, Natl Ctr Nanosci & Technol NCNST, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China|Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;

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