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机译:层状结构碲化碲化锑热电薄膜范德华外延的石墨烯衬底
Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea;
Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea;
Kangwon Natl Univ, Dept Nano Appl Engn, Chunchon 24341, South Korea;
Hokkaido Univ, Res Inst Elect Sci, Kita Ku, N20W10, Sapporo, Hokkaido 0010020, Japan;
Sungkyunkwan Univ, Inst Basic Sci, Ctr Integrated Nanostruct Phys, Suwon 16419, South Korea|Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea;
Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea;
bismuth antimony telluride; graphene; layered structures; thermoelectrics; van der Waals epitaxy;
机译:RF磁控溅射沉积功率对柔性基材锑碲化酰胺结晶度和热电性能的影响
机译:SoI衬底上碲化铋和碲化锑薄膜热电器件的CMOS FinFET集成
机译:van der Waals在单晶石墨烯上的锑群岛,床单和薄膜
机译:热壁外延,热电性能的碲化铋薄膜的生长
机译:金属有机化学气相沉积法在2D衬底上碲化镉薄膜的Van der Waals外延
机译:通过溶液相范德华外延在石墨烯上形成超薄石墨二炔薄膜
机译:甲铋型拓扑绝缘子van der Waals缺陷动态