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首页> 外文期刊>Advanced Materials >Improved Charge Extraction Beyond Diffusion Length by Layer-by-Layer Multistacking Intercalation of Graphene Layers inside Quantum Dots Films
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Improved Charge Extraction Beyond Diffusion Length by Layer-by-Layer Multistacking Intercalation of Graphene Layers inside Quantum Dots Films

机译:通过量子点薄膜内部的石墨烯层的逐层多层堆叠插层改善了超出扩散长度的电荷提取

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摘要

Charge collection is critical in any photodetector or photovoltaic device. Novel materials such as quantum dots (QDs) have extraordinary light absorption properties, but their poor mobility and short diffusion length limit efficient charge collection using conventional top/bottom contacts. In this work, a novel architecture based on multiple intercalated chemical vapor deposition graphene monolayers distributed in an orderly manner inside a QD film is studied. The intercalated graphene layers ensure that at any point in the absorbing material, photocarriers will be efficiently collected and transported. The devices with intercalated graphene layers have superior quantum efficiency over single-bottom graphene/QD devices, overcoming the known restriction that the diffusion length imposes on film thickness. QD film with increased thickness shows efficient charge collection over the entire lambda approximate to 500-1000 nm spectrum. This architecture could be applied to boost the performance of other low-cost materials with poor mobility, allowing efficient collection for films thicker than their diffusion length.
机译:电荷收集在任何光电探测器或光伏设备中都是至关重要的。诸如量子点(QD)之类的新型材料具有非凡的光吸收特性,但是它们的迁移率差和扩散长度短限制了使用常规顶部/底部触点的有效电荷收集。在这项工作中,研究了一种基于在QD薄膜内有序分布的多个插层化学气相沉积石墨烯单层的新型架构。插入的石墨烯层可确保在吸收材料中的任何一点上,光载体都将被有效地收集和运输。具有单层石墨烯/ QD器件的具有插层石墨烯层的器件具有出色的量子效率,克服了扩散长度强加于膜厚度的已知限制。厚度增加的QD膜在整个λ上显示了约500-1000 nm光谱的有效电荷收集。该体系结构可用于提高流动性差的其他低成本材料的性能,从而可以有效收集厚度大于其扩散长度的薄膜。

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  • 来源
    《Advanced Materials 》 |2019年第14期| 1807894.1-1807894.6| 共6页
  • 作者单位

    Univ Calif San Diego, Dept NanoEngn, Ctr Memory & Recording Res, Calibaja Ctr Resilient Mat & Syst, 9500 Gilman Dr, La Jolla, CA 92093 USA;

    Univ Calif San Diego, Dept NanoEngn, Ctr Memory & Recording Res, Calibaja Ctr Resilient Mat & Syst, 9500 Gilman Dr, La Jolla, CA 92093 USA;

    Univ Calif San Diego, Dept NanoEngn, Ctr Memory & Recording Res, Calibaja Ctr Resilient Mat & Syst, 9500 Gilman Dr, La Jolla, CA 92093 USA;

    Univ Calif San Diego, Dept NanoEngn, Ctr Memory & Recording Res, Calibaja Ctr Resilient Mat & Syst, 9500 Gilman Dr, La Jolla, CA 92093 USA;

    Univ Calif San Diego, Dept NanoEngn, Ctr Memory & Recording Res, Calibaja Ctr Resilient Mat & Syst, 9500 Gilman Dr, La Jolla, CA 92093 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    charge extraction; graphene quantum dots hybrid devices; light absorption; optoelectronics;

    机译:电荷萃取石墨烯量子点混合器件光吸收光电;

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