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Silicon-Doped LiFePO_4 Single Crystals: Growth, Conductivity Behavior, and Diffusivity

机译:硅掺杂的LiFePO_4单晶:生长,电导行为和扩散率

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摘要

Single crystals of silicon doped LiFePO_4 with a silicon content of 1% are grown successfully by the floating zone technique and characterized by single-crystal and powder X-ray diffraction, secondary ion mass spectroscopy, and chemical analysis. Electron paramagnetic resonance demonstrates the presence of only Fe~(2+); no traces of Fe~(3+) are found. Impedance spectroscopy as well as step-function polarization/depolarization (DC) measurements are carried out usingthe cells Ti/LiFe(Si)PO_4/Ti and LiAl/Lil/LiFe(Si)PO_4/Lil/LiAl. The electronic and ionic conductivities as well as the Li-diffusivity of the sample in the major crystallographic directions ([hOO], [OkO], and [001]) are determined. Within experimental error the transport properties along the b-and c-axes are found to be the same but differ significantly from the a-axis, which exhibits lower values. Compared to undoped LiFePO_4, Si-doping leads to an increase of the ionic conductivity while the electronic conductivity decreases, which is in agreement with a donor effect. The activation energies of conductivities and diffusivities are interpreted in terms of defect chemistry and relevant Brouwer diagrams are given.
机译:硅掺杂的LiFePO_4的单晶硅含量为1%,通过浮区技术成功生长,并通过单晶和粉末X射线衍射,二次离子质谱和化学分析进行了表征。电子顺磁共振表明仅存在Fe〜(2+);没有发现Fe〜(3+)的痕迹。使用电池Ti / LiFe(Si)PO_4 / Ti和LiAl / Lil / LiFe(Si)PO_4 / Lil / LiAl进行阻抗光谱以及阶跃功能极化/去极化(DC)测量。确定样品在主要晶体学方向([hOO],[OkO]和[001])的电子和离子电导率以及Li扩散系数。在实验误差范围内,发现沿b轴和c轴的传输特性相同,但与a轴却有很大差异,而a轴显示的值较低。与未掺杂的LiFePO_4相比,Si掺杂导致离子电导率增加,而电子电导率降低,这与施主效应一致。根据缺陷化学来解释电导率和扩散率的活化能,并给出相关的布劳威尔图。

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  • 来源
    《Advanced Functional Materials》 |2009年第11期|1697-1704|共8页
  • 作者单位

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

    Max Planck Institute for Solid State Research D-70569 Stuttgart (Germany);

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