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机译:区域规则的聚(3-己基噻吩)薄膜的可调节结晶度及其对场效应迁移率的影响
School of Chemical and Biomolecular Engineering Georgia Institute of Technology Atlanta, GA 30332, USA;
School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332, USA;
School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA,DuPont Central Research and Development, Experimental Station, Wilmington, DE 19880, USA;
School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA;
School of Chemical and Biomolecular Engineering Georgia Institute of Technology Atlanta, GA 30332, USA,School of Materials Science and Engineering Georgia Institute of Technology Atlanta, GA 30332, USA,School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, GA 30332, USA;
机译:区域规则的聚(3-己基噻吩)薄膜场效应晶体管的场效应迁移率的纳米结构依赖性。
机译:场效应迁移率和接触电阻对区域规则的聚(3-己基噻吩)薄膜晶体管的纳米结构的依赖性
机译:机械摩擦和外延取向的规则型聚(3-己基噻吩)薄膜的2D与3D结晶顺序
机译:现场效应迁移率在植物聚(3-己基烯烯)薄膜场效应晶体管中的纳米结构依赖性
机译:基于区域规则的聚(3-己基噻吩)的场效应晶体管中的电荷注入和传输。
机译:通过浸涂技术增强聚(3-己基噻吩)薄膜中的结构有序性从而提高场效应迁移率
机译:现场效应迁移率在植物聚(3-己基烯烯)薄膜场效应晶体管中的纳米结构依赖性