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Enhancement of field-effect mobility due to structural ordering in poly(3-hexylthiophene) films by the dip-coating technique

机译:通过浸涂技术增强聚(3-己基噻吩)薄膜中的结构有序性从而提高场效应迁移率

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摘要

Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3-hexylthiophene) (P3HT) active layer using a dip-coating method. The field-effect mobility in OFETs depends on chain orientation and crystallinity and is related to direction and withdrawal speed with respect to the source/drain orientation. In this paper, how to control the structural and transport properties of P3HT films by coating parallel and perpendicular to the dipping direction is demonstrated. X-ray diffraction curves taken in the perpendicular direction exhibit a higher degree of crystalline ordering and edge-on conformation compared with those in the parallel direction; this finding correlates with the directional anisotropy of the OFET mobility. Both structural anisotropy and transport properties are enhanced upon thermal treatment.
机译:通过使用浸涂法沉积区域规则的聚(3-己基噻吩)(P3HT)有源层来制造有机场效应晶体管(OFET)。 OFET中的场效应迁移率取决于链取向和结晶度,并且与相对于源/漏取向的方向和撤出速度有关。本文介绍了如何通过平行和垂直于浸入方向的涂覆来控制P3HT膜的结构和传输性能。与平行方向相比,在垂直方向拍摄的X射线衍射曲线显示出更高的晶体有序性和边沿构象。这一发现与OFET迁移率的方向各向异性有关。热处理后,结构各向异性和传输性能均得到增强。

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