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Physicochemically Stable Polymer-Coupled Oxide Dielectrics for Multipurpose Organic Electronic Applications

机译:用于多用途有机电子应用的物理化学稳定的聚合物偶联氧化物电介质

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摘要

A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane-terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic-oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS-coupled SiO_2 or AIO_X dielectrics, various vacuum- and solution-processable organic semiconductors can develop highly ordered crystalline structures that provide higher field-effect mobilities (μfet~s) than other surface-modified systems, and negligible hysteresis in organic field-effect transistors (OFETs). In particular, the use of PS-coupled AIO_X nanodielectrics enables a solution-processable triethylsilylethynyl anthradithiophene OFET to operate with μFET ~1.26 cm~2 V~(-1) s~(-1) at a gate voltage below -1 V. In addition, a complementary metal-oxide semiconductor-like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS-coupled SiO_2 dielectric.
机译:将化学偶联的聚合物层从稀氯硅烷封端的聚苯乙烯(PS)溶液引入到无机氧化物电介质上。这种表面改性的结果是,亲水性氧化物电介质获得疏水性,物理化学稳定的特性。在此类PS耦合的SiO_2或AIO_X电介质上,各种真空和可溶液处理的有机半导体可以形成高度有序的晶体结构,与其他表面改性系统相比,该晶体结构提供更高的场效应迁移率(μfet〜s),并且在有机场中的滞后作用可忽略不计效应晶体管(OFET)。特别是,使用PS耦合的AIO_X纳米电介质,可以使溶液可加工的三乙基甲硅烷基乙炔基蒽噻吩OFET在低于-1 V的栅极电压下以μFET〜1.26 cm〜2 V〜(-1)s〜(-1)工作。此外,在PS耦合的SiO_2电介质上成功制造了具有约32的高电压增益的互补金属氧化物半导体状有机逆变器。

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  • 来源
    《Advanced Functional Materials》 |2011年第12期|p.2198-2207|共10页
  • 作者单位

    Department of Chemical Engineering Pohang University of Science and Technology Pohang 790-784, South Korea;

    Department of Advanced Fiber Engineering Inha University Incheon 402-751, South Korea;

    Department of Advanced Fiber Engineering Inha University Incheon 402-751, South Korea;

    Department of ChemistryUniversity of Kentucky KY 40506, USA;

    Department of Chemical Engineering Pohang University of Science and Technology Pohang 790-784, South Korea;

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