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Reversible Switching Phenomenon in Diarylethene Molecular Devices with Reduced Graphene Oxide Electrodes on Flexible Substrates

机译:柔性基板上氧化石墨烯电极减少的二芳基乙烯分子器件中的可逆转换现象

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摘要

Photoswitching molecular electronic devices with reduced graphene oxide (rGO) top electrodes on flexible substrates are fabricated and characterized. It has been reported previously that diarylethene molecular devices with poly-(3,4-ethylenedioxythiophene) stabilized with poly-(4-styrenesulfonic acid)/Au top electrodes can hold two stable electrical conductance states when the devices are exposed to UV or visible light during device fabrication. However, those devices fail to show the reversible switching phenomenon in response to illumination after device fabrication. By employing conducting and transparent rGO top electrodes, it is demonstrated that the diarylethene molecular devices show a reversible switching phenomenon, i.e., the fabricated devices change their conductance state in response to the alternating illumination with UV and visible light. Furthermore, the molecular devices with rGO top electrodes also exhibit good longtime stability and reliable electrical characteristics when subjected to various mechanical stresses (bending radius down to 5 mm and bending cycle over 10(4)).
机译:制备并表征了在柔性基板上具有还原的氧化石墨烯(rGO)顶部电极的光开关分子电子器件。以前已经报道过,当聚二甲苯乙烯分子器件暴露于紫外线或可见光下时,聚(4-苯乙烯磺酸)/ Au上电极稳定的聚(3,4-乙撑二氧噻吩)的二芳基乙烯分子器件可以保持两个稳定的电导状态。在器件制造过程中。然而,那些器件在器件制造之后响应于照明不能显示可逆的开关现象。通过使用导电且透明的rGO顶部电极,已证明二芳基乙烯分子器件显示出可逆的开关现象,即,所制造的器件响应于紫外线和可见光的交替照射而改变其电导状态。此外,带有rGO顶部电极的分子器件在承受各种机械应力(弯曲半径小至5 mm,弯曲循环超过10(4))时,还具有良好的长期稳定性和可靠的电特性。

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  • 来源
    《Advanced Functional Materials》 |2015年第37期|5918-5923|共6页
  • 作者单位

    Seoul Natl Univ, Inst Appl Phys, Seoul 151747, South Korea.;

    Seoul Natl Univ, Inst Appl Phys, Seoul 151747, South Korea.;

    Seoul Natl Univ, Inst Appl Phys, Seoul 151747, South Korea.;

    Seoul Natl Univ, Inst Appl Phys, Seoul 151747, South Korea.;

    Univ Konstanz, Dept Chem, D-78457 Constance, Germany.;

    Univ Konstanz, Dept Phys, D-78457 Constance, Germany.;

    Univ Konstanz, Dept Chem, D-78457 Constance, Germany.;

    Seoul Natl Univ, Inst Appl Phys, Seoul 151747, South Korea.;

    Seoul Natl Univ, Inst Appl Phys, Seoul 151747, South Korea.;

    Sungkyunkwan Univ, Dept Chem, Dept Energy Sci, Ctr Integrated Nanostruct Phys,Inst Basic Sci, Suwon 440746, South Korea.;

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