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首页> 外文期刊>Advanced Functional Materials >Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure
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Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure

机译:铋基堆叠结构的弱拓扑绝缘子的最小导热系数

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摘要

Contrary to the conventional belief that the consideration for topological insulators (TIs) as potential thermoelectrics is due to their excellent electrical properties benefiting from the topological surface states, this work shows that the 3D weak TIs, formed by alternating stacks of quantum spin Hall layers and normal insulator (NI) layers, can also be decent thermoelectrics because of their focus on minimum thermal conductivity. The minimum lattice thermal conductivity is experimentally confirmed in Bi14Rh3I9 and theoretically predicted for Bi2TeI at room temperature. It is revealed that the topologically "trivial" NI layers play a surprisingly critical role in hindering phonon propagation. The weak bonding in the NI layers gives rise to significantly low sound velocity, and the localized low-frequency vibrations of the NI layers cause strong acoustic-optical interactions and lattice anharmonicity. All these features are favorable for the realization of exceptionally low lattice thermal conductivity, and therefore present remarkable opportunities for developing high-performance thermoelectrics in weak TIs.
机译:与传统的认为拓扑绝缘体(TI)作为潜在热电材料的原因是由于其出色的电学特性得益于拓扑表面状态相反,这项工作表明,由量子自旋霍尔层和常规绝缘体(NI)层也可以是体面的热电体,因为它们专注于最小的导热系数。在Bi14Rh3I9中实验确定了最小晶格热导率,并在室温下从理论上预测了Bi2TeI。揭示了拓扑上“琐碎的” NI层在阻碍声子传播中起着令人惊讶的关键作用。 NI层中的弱结合会导致声速大大降低,NI层的局部低频振动会引起强烈的声光相互作用和晶格非谐性。所有这些功能都有利于实现极低的晶格热导率,因此为在弱TI中开发高性能热电器件提供了绝佳的机会。

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  • 来源
    《Advanced Functional Materials 》 |2016年第29期| 5360-5367| 共8页
  • 作者单位

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA|Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA|Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China;

    Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA|Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA;

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA;

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA|Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China;

    Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA|Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA;

    Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China;

    Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China|Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China;

    MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA;

    Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA;

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