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机译:用于柔性电阻存储应用的六方氮化硼薄膜
Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore|Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore;
2D materials; ex situ TEM; flexible memory; hexagonal boron nitride; resistive switching memory;
机译:氮化硼和氮化硼纳米片增强的聚酰亚胺薄膜在透明柔性器件中的应用
机译:氮化硼和氮化硼纳米片增强的聚酰亚胺薄膜在透明柔性器件中的应用
机译:用于柔性存储应用的Hf_xZr_(1-x)O_2薄膜的电阻开关特性
机译:六方氮化硼,高k和聚合物薄膜上的最新石墨烯晶体管,用于GHz柔性模拟纳米电子产品
机译:自旋电子学的新大道;六方氮化硼和功能化石墨烯上超薄钴膜的磁传输
机译:二维六方氮化硼薄膜中双极和阈值电阻转换的导电原子力显微镜研究
机译:立方氮化物薄膜和工具应用的立方硼氮化物薄膜硬度特性