机译:用于柔性存储应用的Hf_xZr_(1-x)O_2薄膜的电阻开关特性
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China;
机译:用于柔性存储应用的Hf_(0.5)Zr_(0.5)O_2薄膜的双极电阻开关特性
机译:柔性存储应用中Al2O3 / ZnO双层薄膜的电阻转换特性
机译:低功耗柔性存储器应用中Sm2O3和Lu2O3薄膜的电流传导和电阻切换特性
机译:Pechini路线制备的Hf_xZr_(1-x)O_2薄膜的结构和形态学性质
机译:多层薄膜磁阻存储元件的开关阈值研究
机译:用于高级柔性存储应用的Lu2O3薄膜中的电阻开关行为
机译:用于高级柔性存储应用的Lu2O3薄膜中的电阻开关行为