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Complementary Logic with Voltage Zero-Loss and Nano-Watt Power via Configurable MoS_2/WSe_2 Gate

机译:通过可配置的MoS_2 / WSe_2门具有电压零损耗和纳瓦功率的互补逻辑

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摘要

Due to the development of 2D material transistors research and preparation process, many fundamental logic units, like inverter and NAND gate, have been achieved to promote large-scale integration. However, there are critical challenges like voltage loss and large dynamic power consumption for integrated circuits based on 2D semiconductors. Here high-performance logic devices via different MoS2-WSe2 configurations, a MoS2-WSe2 complementary logic transmission gate with the ability to transport electrical level without any voltage loss and a MoS2-WSe2 complementary logic inverter with small dynamic power consumption and maximum voltage gain of 18 are demonstrated. Furthermore, an essential logic unit like Schmidt flip-flop is put forward by combining MoS2-WSe2 inverter and graphene floating gate. The realization of various logics achieved by different MoS2-WSe2 configurations makes it much easier to fabricate multifunctional system on a chip, which has a significant meaning for the development of high density integrated circuits.
机译:由于2D材料晶体管研究和制备工艺的发展,已经实现了许多基本逻辑单元,例如反相器和NAND门,以促进大规模集成。然而,对于基于2D半导体的集成电路来说,存在着严峻的挑战,例如电压损失和大的动态功耗。在这里,高性能逻辑器件通过不同的MoS2-WSe2配置,具有能够传输电平而无任何电压损失的MoS2-WSe2互补逻辑传输门以及具有低动态功耗和最大电压增益的MoS2-WSe2互补逻辑反相器组成展示了18个。此外,通过结合MoS2-WSe2反相器和石墨烯浮栅,提出了诸如Schmidt触发器之类的基本逻辑单元。由不同的MoS2-WSe2配置实现的各种逻辑的实现使得在芯片上制造多功能系统变得容易得多,这对开发高密度集成电路具有重要意义。

著录项

  • 来源
    《Advanced Functional Materials》 |2018年第44期|1805171.1-1805171.7|共7页
  • 作者单位

    Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;

    Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China;

    Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China;

    Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;

    Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    inverter; MoS2; Schmidt-like flip-flop; transmission gate; WSe2;

    机译:逆变器;MoS2;施密特式触发器;传输门;WSe2;

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