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Logic level converter between CMOS or TTL and current mode logic - provides output with smaller level shift at junction of resistance and chain of two complementary MOSFET(s) with different gate voltages

机译:CMOS或TTL与电流模式逻辑之间的逻辑电平转换器-在具有不同栅极电压的两个互补MOSFET的电阻和链的交界处提供具有较小电平偏移的输出

摘要

A resistance (1) is connected between a source of supply voltage (VCC) and a complementary MOSFET chain (2,3) with gate electrodes returned to different fixed potentials (V1,V2). The potential (V1) applied to the n-channel MOSFET (2) is such that its gate-to-source voltage is always greater than its voltage drop. To set the switching point of the p-channel MOSFET (3) in the region of its input signal level shift, the gate voltage (V2) can be equal to the supply voltage. ADVANTAGE - Relatively large shifts between high and low logic levels can be reduced with use of only one supply voltage source.
机译:电阻(1)连接在电源电压(VCC)和互补MOSFET链(2,3)之间,栅电极返回到不同的固定电位(V1,V2)。施加到n沟道MOSFET(2)的电势(V1)使其栅极-源极电压始终大于其压降。为了在输入信号电平偏移区域内设置p沟道MOSFET(3)的开关点,栅极电压(V2)可以等于电源电压。优势-仅使用一个电源电压源,就可以减少高逻辑电平和低逻辑电平之间的较大偏移。

著录项

  • 公开/公告号DE4219553A1

    专利类型

  • 公开/公告日1993-12-16

    原文格式PDF

  • 申请/专利权人 SIEMENS AG 80333 MUENCHEN DE;

    申请/专利号DE19924219553

  • 发明设计人 BARRE CLAUDE 8000 MUENCHEN DE;

    申请日1992-06-15

  • 分类号H03K19/0175;G08C13/00;

  • 国家 DE

  • 入库时间 2022-08-22 04:36:10

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