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Complementary IGFET Schmitt trigger logic circuit having a variable bias voltage logic gate section

机译:具有可变偏置电压逻辑门部分的互补IGFET施密特触发器逻辑电路

摘要

A logic gate section of a Schmitt trigger circuit has first and second nodes to which variable bias voltages are applied. A first bias control IGFET is connected between the first node and a first potential terminal. A second bias control IGFET is connected between the first node and a second potential terminal. A third bias control IGFET is connected between the second node and the first potential terminal. A fourth bias control IGFET is connected between the second node and the second potential terminal. A control signal to the gates of the first and fourth bias control IGFET's is provided by the Schmitt trigger input signal and the control signal to each of the gates of the third and fourth bias control IGFET's is provided by the Schmitt trigger feedback connection of two series-connected inverters.
机译:施密特触发器电路的逻辑门部分具有施加了可变偏置电压的第一和第二节点。第一偏置控制IGFET连接在第一节点和第一电势端子之间。第二偏置控制IGFET连接在第一节点和第二电势端子之间。第三偏置控制IGFET连接在第二节点和第一电势端子之间。第四偏置控制IGFET连接在第二节点和第二电势端子之间。施密特触发器输入信号提供给第一和第四偏置控制IGFET的栅极的控制信号,而两个串联的施密特触发器反馈提供给第三和第四偏置控制IGFET的每个栅极的控制信号连接的逆变器。

著录项

  • 公开/公告号US4464587A

    专利类型

  • 公开/公告日1984-08-07

    原文格式PDF

  • 申请/专利权人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA;

    申请/专利号US19810295825

  • 发明设计人 YASOJI SUZUKI;KENJI MATSUO;

    申请日1981-08-24

  • 分类号H03K3/037;H03K3/356;H03K19/094;

  • 国家 US

  • 入库时间 2022-08-22 08:37:54

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