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首页> 外文期刊>Advanced energy materials >Quantifying and Understanding Voltage Losses Due to Nonradiative Recombination in Bulk Heterojunction Organic Solar Cells with Low Energetic Offsets
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Quantifying and Understanding Voltage Losses Due to Nonradiative Recombination in Bulk Heterojunction Organic Solar Cells with Low Energetic Offsets

机译:量化和了解低能偏移的大体积异质结有机太阳能电池中由于非辐射复合引起的电压损失

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摘要

Open-circuit voltage (V-OC) losses in organic photovoltaics (OPVs) inhibit devices from reaching V-OC values comparable to the bandgap of the donor-acceptor blend. Specifically, nonradiative recombination losses ( increment V-nr) are much greater in OPVs than in silicon or perovskite solar cells, yet the origins of this are not fully understood. To understand what makes a system have high or low loss, an investigation of the nonradiative recombination losses in a total of nine blend systems is carried out. An apparent relationship is observed between the relative domain purity of six blends and the degree of nonradiative recombination loss, where films exhibiting relatively less pure domains show lower increment V-nr than films with higher domain purity. Additionally, it is shown that when paired with a fullerene acceptor, polymer donors which have bulky backbone units to inhibit close pi-pi stacking exhibit lower nonradiative recombination losses than in blends where the polymer can pack more closely. This work reports a strategy that ensures increment V-nr can be measured accurately and reports key observations on the relationship between increment V-nr and properties of the donor/acceptor interface.
机译:有机光伏(OPV)中的开路电压(V-OC)损耗会阻止设备达到与供体-受体混合物的带隙相当的V-OC值。具体而言,与硅或钙钛矿太阳能电池相比,OPV中的非辐射复合损失(增量V-nr)要大得多,但其成因尚未完全弄清。为了了解是什么使系统具有高损耗或低损耗,对总共九种共混体系中的非辐射复合损耗进行了研究。在六种共混物的相对畴纯度与非辐射重组损失程度之间观察到明显的关系,其中表现出相对较低纯度的膜的薄膜的V-nr增量要比具有更高畴纯度的膜的增量低。另外,显示出当与富勒烯受体配对时,具有庞大的主链单元以抑制紧密的π-π堆积的聚合物供体显示出比其中聚合物可以更紧密堆积的共混物更低的非辐射重组损失。这项工作报告了确保增量V-nr可以准确测量的策略,并报告了有关增量V-nr与供体/受体界面性质之间关系的关键观察结果。

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