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Quantifying and Understanding Voltage Losses Due to Nonradiative Recombination in Bulk Heterojunction Organic Solar Cells with Low Energetic Offsets

机译:由于低能量偏移的散装异质结有机太阳能电池中的非抗体重组导致的电压损失

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摘要

Open-circuit voltage (V-OC) losses in organic photovoltaics (OPVs) inhibit devices from reaching V-OC values comparable to the bandgap of the donor-acceptor blend. Specifically, nonradiative recombination losses ( increment V-nr) are much greater in OPVs than in silicon or perovskite solar cells, yet the origins of this are not fully understood. To understand what makes a system have high or low loss, an investigation of the nonradiative recombination losses in a total of nine blend systems is carried out. An apparent relationship is observed between the relative domain purity of six blends and the degree of nonradiative recombination loss, where films exhibiting relatively less pure domains show lower increment V-nr than films with higher domain purity. Additionally, it is shown that when paired with a fullerene acceptor, polymer donors which have bulky backbone units to inhibit close pi-pi stacking exhibit lower nonradiative recombination losses than in blends where the polymer can pack more closely. This work reports a strategy that ensures increment V-nr can be measured accurately and reports key observations on the relationship between increment V-nr and properties of the donor/acceptor interface.
机译:有机光伏(OPVS)中的开路电压(V-OC)损耗抑制器件从达到与供体 - 受体混合物的带隙相当的V-OC值。具体而言,OPVs的非抗体重组损失(增量V-NR)比在硅或钙钛矿太阳能电池中大得多,但这尚未完全理解。为了了解系统具有高或低损失的原因,进行了总共九个共混体系的非相互作用重组损失的研究。在六个共混物的相对结构域纯度和非散域纯度较少的薄膜的相对结构域纯度与非致域的薄膜之间观察到表观关系,显示比具有更高域纯度的薄膜的较低增量V-Nr。另外,当与富勒烯受体配对时,具有抑制密切PI-PI堆叠的大容量骨架单元的聚合物供体表现出比在聚合物可以更接近地包装的混合物中的较低的非相互作用重组损失。这项工作报告了一种可确保递增V-NR的策略可以准确地测量,并报告关于捐赠V-NR和施主/接口的属性之间的关系的关键观察。

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