APPLICATION OF GaN PRESSURE GROWN CRYSTALS FOR EPITAXY OF GaN-BASED STRUCTURES

摘要

The results obtained with the use of the pressure grown GaN single crys- talline substrates allow to draw the following conclusions important for the construction of In-free UV light emitting diodes and lasers and InGaN-based high power blue lasers: `1. The application of the pressure grown GaN signle crystalline substrates allows to grow near dislocation free layer structures by both metal organic chemical vapor deposition and MBE. 2. The elimi- nation of dislocations leads to highly efficient UV emission from GaN and GaN/AlGaN quantum wells which is impossible for strongly dislocated struc- tures grown on sapphire.