Epitaxial Growths of II_VI compounds on(110) substrates

摘要

We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.