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Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode

机译:通过InAs / GaAs量子点和微柱腔模式的完美耦合来促进单光子发射

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摘要

Quantum light source that emits single photons is the key device of quantum information processing [ – ]. High photon extraction efficiency, strong suppression of multi-photon emission, and high indistinguishability [ ] of the emitted single photons are desired. Among all the ways to realize quantum light sources such as atomic systems [ ], parametric down-conversion [ ], or vacancy centers in diamond [ , ], semiconductor InAs/GaAs quantum dots (QDs) are promising candidates to realize practical monolithic quantum light sources for quantum communication and other applications such as quantum-enhanced sensing [ ] or quantum imaging [ ]. The advantages of InAs/GaAs QDs include extremely narrow linewidth [ ], stable and on-demand emission with high single photon emission rate (can be enhanced by the cavity coupling) [ ], easy to tune through physical multi-fields [ – ], more suitable for fiber-array coupling output [ ], and the wavelength is tunable (840 ∼1300 nm at present) for potential telecom quantum information application [ ]. Despite its advantages, the key issue to realize a practical QD single-photon source is how to further improve the brightness (i.e., count rates) of single photon source, which will greatly improve the efficiency of quantum information transmission [ ]. Therefore, it is necessary to improve the extraction efficiency of QD emission and improve their brightness by means of coupling QDs with microcavities, including micropillars [ ], microdisk [ ], photonic crystals [ ], and microstructures like microlenses [ – ]. Meanwhile, the light-matter interaction of different systems and the coupling effect in the visible and infrared range have been extensively studied [ – ]. In recent years, the study of semiconductor QDs embedded in micropillar cavities and their cavity electrodynamic effects has attracted extensive attention for high value, low mode volume [ ], and its convenience in direct fiber-coupling output [ – ]. Furthermore, a perfect resonant coupling of the cavity mode with QD luminescence wavelength is another key challenge [ , ]. In this work, a pronounced crossover phenomenon of exciton energy and micropillar cavity mode (Q ∼ 3800) and an enhancement of exciton emission intensity were observed and an experimental precise cavity mode calibration process was proposed, which can achieve a perfect coupling of micropillar cavity mode and wavelength of QDs and then produce a single photon source with high brightness and high single-photon purity.
机译:发出单光子的量子光源是量子信息处理的关键设备[–]。期望高的光子提取效率,对多光子发射的强抑制以及所发射的单光子的高不可分辨性[]。在实现诸如原子系统[],参数下转换[]或钻石[]中的空位中心之类的量子光源的所有方法中,半导体InAs / GaAs量子点(QD)有望成为实现实用的整体式量子光的候选者量子通信和其他应用(例如量子增强传感[]或量子成像[])的信号源。 InAs / GaAs QD的优势包括极窄的线宽[],稳定和按需发射以及高单光子发射速率(可通过腔耦合提高)[],易于通过物理多场进行调谐[–],更适合光纤阵列耦合输出[],并且波长可调(目前为840〜1300 nm),可用于潜在的电信量子信息应用[]。尽管有其优点,实现实用的QD单光子源的关键问题是如何进一步提高单光子源的亮度(即计数率),这将大大提高量子信息传输的效率[]。因此,有必要通过将QD与包括微柱[],微盘[],光子晶体[]以及微结构(如微透镜[-])在内的微腔耦合来提高QD发射的提取效率并提高其亮度。同时,已经广泛研究了不同系统的光-物质相互作用以及可见光和红外光范围内的耦合效应[–]。近年来,对嵌在微柱腔中的半导体量子点及其腔电动力学效应的研究引起了人们的广泛关注,它们涉及高值,低模量[],以及其在直接光纤耦合输出中的便利性[-]。此外,腔模与QD发光波长的完美共振耦合是另一个关键挑战[]。在这项工作中,观察到了激子能量和微柱腔模式的明显交叉现象(Q〜3800)和激子发射强度的增强,并提出了实验精确的腔模校准过程,可以实现微柱腔模式的完美耦合。和量子点的波长,然后产生具有高亮度和高单光子纯度的单光子源。

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