Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light–matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a spectral range from 400 nm to 800 nm. The comparison of the device’s performance in terms of responsivity and rectification ratio is presented. Raman spectroscopy provides information on the graphene single layer’s quality and oxidation. The results showcase the importance of the doping of the silicon substrate to realize an efficient heterojunction that improves the photoresponse, reducing the dark current.
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机译：光电探测器能够在多种技术应用中引起极大的兴趣，因为它们能够通过光-物质相互作用将光信号转换为电信号。特别是，基于石墨烯/硅异质结的宽带光电探测器由于其引人注目的性能，可能在多种应用中有用。在这里，我们提出了一种基于石墨烯单层沉积在 p 型和 n 型硅衬底上的二维光电二极管异质结。我们报告了在 400 nm 至 800 nm 光谱范围内的黑暗和明亮条件下测量的器件的电光特性。本文比较了该器件在响应度和整流率方面的性能。拉曼光谱提供有关石墨烯单层质量和氧化的信息。结果证明了硅衬底掺杂对于实现高效异质结的重要性，从而提高了光响应，减少了暗电流。
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