Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

摘要

Schematic illustration of the working principle of solid dielectric-gated FET, ion gel-gated FET and, Li-ion glass-gated FET. The sketches are shown for positive gate bias. The circles and the arrows in the connection schemes represent the bias and ground, respectively. Raman spectrum of the monolayer CVD MoS transferred onto glass substrate. Inset shows dark-field optical micrograph of the transferred CVD MoS . The boundary of the flake is marked with white dash-dotted lines to aid visualization. Scale bar is 10 µm. Photoluminescence spectrum of the same flake. Capacitance/Phase angle vs. frequency of Li-ion glass substrate with Ni (20 nm) as both top and bottom electrode. The frequency spectrum can be divided into three distinct regions: (i) R1 where the EDL is formed, (ii) R2 where ion migration dominates, and (iii) R3 where the bulk Li-ion glass works as a dielectric.