ReS2 Charge Trapping Synaptic Device for Face Recognition Application

摘要

The synaptic devices based on ReS 2D material. Crystal structure of monolayer ReS . Optical image of a five-layer ReS flake. Inset: source and drain electrodes patterned on the ReS flake; direction is taken as the direction of channel current. The AFM image and height profile of the ReS flake. Schematic diagram of a 2D material ReS synaptic device. The thickness of the Al O , ZrO , and Al O stack (from bottom) is 12 nm, 4 nm, and 4 nm, respectively