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Quantitative Mapping of Stress Heterogeneity in Polycrystalline Alumina using Hyperspectral Fluorescence Microscopy

机译:使用高光谱荧光显微镜对多晶氧化铝中应力异质性的定量映射

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摘要

The microstructurally-induced heterogeneous stress fields arising in a series of Cr-doped polycrystalline alumina materials are mapped with sub-micrometer sub-grain size resolution using fluorescence microscopy. Analysis of the hyperspectral data sets generated during imaging enabled both the amplitude and position of the characteristic Cr R1 fluorescence peak to be determined at every pixel in an image. The peak amplitude information was used to segment the images into individual grains and grain boundary regions. The peak position information, in conjunction with measurements on single-crystal controls, was used to quantify overall stress distributions in the materials and provide stress scales for maps. The combined information enabled spatial variations in the stress fields in crystallographic axes to be mapped and compared directly with microstructural features such as grains and grain boundaries. The mean c-axis stresses in these materials were approximately 200 MPa with stress distribution widths of about 70 MPa, both increasing with average grain size. Greatest variations in stress were observed at grain junctions; no trend in the stress for individual grains with grain size was observed.
机译:使用荧光显微镜用亚微米亚晶粒尺寸分辨率绘制了一系列Cr掺杂多晶氧化铝材料中产生的微观结构诱导的非均质应力场。对在成像期间生成的高光谱数据集的分析使得可以在图像中的每个像素处确定特征Cr R1荧光峰的幅度和位置。峰幅度信息用于将图像分割为单独的晶粒和晶粒边界区域。峰值位置信息与单晶质控品上的测量值一起用于量化材料中的整体应力分布并为贴图提供应力等级。结合的信息使晶轴上应力场的空间变化得以映射,并直接与微观结构特征(例如晶粒和晶界)进行比较。这些材料中的平均c轴应力约为200 MPa,应力分布宽度约为70 MPa,均随平均晶粒尺寸而增加。在晶界处观察到最大的应力变化。没有观察到具有晶粒尺寸的单个晶粒的应力趋势。

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