首页> 美国卫生研究院文献>Nanoscale Research Letters >Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7−δ coated conductors by RF magnetron sputtering
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Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7−δ coated conductors by RF magnetron sputtering

机译:射频磁控溅射在YBa2Cu3O7-δ涂层导体的不同缓冲结构上制备和表征La2Zr2O7膜

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摘要

La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7−x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.
机译:La2Zr2O7(LZO)膜通过射频磁控溅射在不同的缓冲结构上生长,用于大规模应用YBa2Cu3O7-x(YBCO)涂层的导体。三种不同的缓冲结构是氧化铈(CeO2),氧化钇稳定的氧化锆(YSZ)/ CeO2和CeO2 / YSZ / CeO2。通过X射线衍射,光学显微镜,场发射扫描电子显微镜和原子力显微镜研究了LZO膜的微观结构和表面形态。在CeO2,YSZ / CeO2和CeO2 / YSZ / CeO2缓冲结构上制备的LZO薄膜优先沿c轴方向取向并具有高纹理。 CeO2单缓冲架构上的LZO膜的面内纹理为∆φ= 5.5°,面外纹理为∆ω= 3.4°。所有的LZO膜都具有非常光滑的表面,但是在YSZ / CeO2和CeO 2 / YSZ / CeO 2 缓冲结构上生长的LZO膜具有裂纹。在CeO 2 种子NiW缓冲带上生长的高织构LZO膜适用于高电流YBCO膜的外延生长。

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