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Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors

机译:ZnO纳米棒在微间隙电极上的选择性生长及其在紫外传感器中的应用

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摘要

Selective area growth of ZnO nanorods is accomplished on microgap electrodes (spacing of 6 μm) by using a facile wet chemical etching process. The growth of ZnO nanorods on a selected area of microgap electrode is carried out by hydrothermal synthesis forming nanorod bridge between two electrodes. This is an attractive, genuine, direct, and highly reproducible technique to grow nanowireanorod onto the electrodes on selected area. The ZnO nanorods were grown at 90°C on the pre-patterned electrode system without destroying the electrode surface structure interface and geometry. The ZnO nanorods were tested for their application in ultraviolet (UV) sensors. The photocurrent-to-dark (Iph/Id) ratio was 3.11. At an applied voltage of 5 V, the response and recovery time was 72 and 110 s, respectively, and the response reached 2 A/W. The deposited ZnO nanorods exhibited a UV photoresponse that is promising for future cost-effective and low-power electronic UV-sensing applications.
机译:ZnO纳米棒的选择性区域生长是通过使用便捷的湿法化学蚀刻工艺在微间隙电极上实现的(间距为6μm)。通过水热合成在两个电极之间形成纳米棒桥,在微间隙电极的选定区域上进行ZnO纳米棒的生长。这是一种吸引人的,真正的,直接的且高度可重复的技术,可以将纳米线/纳米线生长到选定区域的电极上。 ZnO纳米棒在90°C的预构图电极系统上生长,而不会破坏电极表面结构的界面和几何形状。测试了ZnO纳米棒在紫外线(UV)传感器中的应用。光电流与暗(Iph / Id)之比为3.11。在5 V的施加电压下,响应和恢复时间分别为72和110 s,响应达到2 A / W。沉积的ZnO纳米棒表现出UV光响应,这对于将来具有成本效益的低功耗电子UV传感应用很有希望。

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