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Electro-Optical Properties of Low-Temperature Growth Indium-tin-oxide Nanowires Using Polystyrene Spheres as Catalyst

机译:聚苯乙烯球体为催化剂的低温生长铟锡氧化物纳米线的电光性能

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摘要

Polystyrene sphere was chosen as a catalyst to fabricate indium-tin-oxide (ITO) nanowires (NWs) with a low-temperature (280–300 °C) electron-beam deposition process, bearing high purity. The ITO NWs with diameter of 20–50 nm and length of ~2 um were obtained. X-ray diffraction and high-resolution transmission electron microscope show high crystal quality. The transmittance is above 90 % at a wavelength 400 nm or more, superior to the ITO bulk film. Owing to the unique morphology gradient of the ITO NWs, the effective refractive index of ITO NWs film is naturally graded from the bottom to the top. The ITO NWs have been used on LED devices (λ = 450 nm), which improved the light output power by 31 % at the current of 150 mA comparing to the one without NWs and did not deteriorate the electrical properties. Such ITO NWs open opportunity in LED devices to further improve light extraction efficiency.
机译:聚苯乙烯球被选作催化剂,以低温(280-300°C)电子束沉积工艺制造氧化铟锡(ITO)纳米线(NW),具有高纯度。获得了直径为20–50 nm和长度为〜2 um的ITO NW。 X射线衍射和高分辨率透射电子显微镜显示出较高的晶体质量。在400nm或更大的波长下,透射率高于90%,优于ITO体膜。由于ITO NWs独特的形貌梯度,ITO NWs膜的有效折射率自然而然地从下到上分级。 ITO NW已用于LED器件(λ= 450 nm),与不使用NW的器件相比,在150 mA的电流下其光输出功率提高了31%,并且不会降低电气性能。这种ITO NW在LED器件中打开了进一步提高光提取效率的机会。

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