As the elements of integrated circuits are downsized to the nanoscale, the current Cu‐based interconnects are facing limitations due to increased resistivity and decreased current‐carrying capacity because of scaling. Here, the bottom‐up synthesis of single‐crystalline WTe2 nanobelts and low‐ and high‐field electrical characterization of nanoscale interconnect test structures in various ambient conditions are reported. Unlike exfoliated flakes obtained by the top‐down approach, the bottom‐up growth mode of WTe2 nanobelts allows systemic characterization of the electrical properties of WTe2 single crystals as a function of channel dimensions. Using a 1D heat transport model and a power law, it is determined that the breakdown of WTe2 devices under vacuum and with AlOx capping layer follows an ideal pattern for Joule heating, far from edge scattering. High‐field electrical measurements and self‐heating modeling demonstrate that the WTe2 nanobelts have a breakdown current density approaching ≈100 MA cm−2, remarkably higher than those of conventional metals and other transition‐metal chalcogenides, and sustain the highest electrical power per channel length (≈16.4 W cm−1) among the interconnect candidates. The results suggest superior robustness of WTe2 against high‐bias sweep and its possible applicability in future nanoelectronics.
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机译:随着集成电路元件的尺寸缩小到纳米级,当前的基于铜的互连因电阻率增加和因缩放而减小的载流能力而面临局限。此处报道了在各种环境条件下单晶WTe2纳米带的自下而上的合成以及纳米级互连测试结构的低场和高场电特性。与通过自上而下的方法获得的片状薄片不同,WTe2纳米带的自下而上的生长模式可以根据通道尺寸对WTe2单晶的电性能进行系统表征。使用一维热传输模型和幂定律,可以确定WTe2器件在真空下并带有AlOx覆盖层的击穿遵循理想的焦耳加热模式,而没有边缘散射。高场电学测量和自热建模表明,WTe2纳米带的击穿电流密度接近≈100MA cm -2 sup>,显着高于常规金属和其他过渡金属硫属元素化物,并且在候选互连中,每通道长度(≈16.4W cm -1 sup>)保持最高电功率。结果表明WTe2对高偏置扫描具有出色的鲁棒性,并且可能在未来的纳米电子学中应用。
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