Preparation of Ultra-Smooth Cu Surface for High-Quality Graphene Synthesis

摘要

As grown graphene by chemical vapor deposition typically degrades greatly due to the presence of grain boundaries, which limit graphene’s excellent properties and integration into advanced applications. It has been demonstrated that there is a strong correlation between substrate morphology and graphene domain density. Here, we investigate how thermal annealing and electro-polishing affects the morphology of Cu foils. Ultra-smooth Cu surfaces can be achieved and maintained at elevated temperatures by electro-polishing after a pre-annealing treatment. This technique has shown to be more effective than just electro-polishing the Cu substrate without pre-annealing. This may be due to the remaining dislocations and point defects within the Cu bulk material moving to the surface when the Cu is heated. Likewise, a pre-annealing step may release them. Graphene grown on annealed electro-polished Cu substrates show a better quality in terms of lower domain density and higher layer uniformity than those grown on Cu substrates with only annealing or only electro-polishing treatment.