首页> 美国卫生研究院文献>Nanoscale Research Letters >Effect of Ultraviolet-Ozone Treatment on MoS2 Monolayers: Comparison of Chemical-Vapor-Deposited Polycrystalline Thin Films and Mechanically Exfoliated Single Crystal Flakes
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Effect of Ultraviolet-Ozone Treatment on MoS2 Monolayers: Comparison of Chemical-Vapor-Deposited Polycrystalline Thin Films and Mechanically Exfoliated Single Crystal Flakes

机译:紫外臭氧处理对MoS2单层的影响:化学气相沉积多晶薄膜与机械剥离单晶薄片的比较

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摘要

We report the different oxidation behavior between polycrystalline chemical-vapor-deposited and mechanically exfoliated single crystal MoS2 monolayers by ultraviolet-ozone treatment. As ultraviolet-ozone treatment time increased from 0 to 5 min, photoluminescence emission and Raman modes of both MoS2 disappeared, suggesting structural degradation by oxidation. Analysis with optical absorbance and X-ray photoelectron spectroscopy suggested the formation of MoO3 in both MoS2 after ultraviolet-ozone treatment. In addition, ultraviolet-ozone treatment possibly led to the formation of oxygen vacancies, molybdenum oxysulfide, or molybdenum sulfates in chemical-vapor-deposited MoS2. The measurement of electrical resistance after ultraviolet-ozone treatment suggested the transformation of chemical-vapor-deposited MoS2 into doped MoO3 and of mechanically exfoliated MoS2 into negligibly doped MoO3. These results demonstrate that the crystallinity of monolayer MoS2 can strongly influence the effect of ultraviolet-ozone treatment, providing important implications on the device integration of MoS2 and other two-dimensional semiconductors.Electronic supplementary materialThe online version of this article (10.1186/s11671-019-3119-3) contains supplementary material, which is available to authorized users.
机译:我们报告了通过紫外臭氧处理的多晶化学气相沉积和机械剥离单晶MoS2单层之间的不同氧化行为。随着紫外臭氧处理时间从0分钟增加到5分钟,两种MoS2的光致发光发射和拉曼模式都消失了,表明氧化导致结构降解。用吸光度和X射线光电子能谱分析表明,紫外线臭氧处理后,两个MoS2中均形成了MoO3。另外,紫外线臭氧处理可能导致在化学气相沉积的MoS2中形成氧空位,氧硫化钼或硫酸钼。紫外臭氧处理后的电阻测量表明,化学气相沉积的MoS2转变为掺杂的MoO3,而机械剥离的MoS2转变为可忽略不计的掺杂的MoO3。这些结果表明,单层MoS2的结晶度可以强烈影响紫外臭氧处理的效果,这对MoS2和其他二维半导体的器件集成具有重要意义。电子补充材料本文的在线版本(10.1186 / s11671-019) -3119-3)包含补充材料,授权用户可以使用。

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