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Composition dependent band offsets of ZnO and its ternary alloys

机译:ZnO及其三元合金的成分依赖带隙

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摘要

We report the calculated fundamental band gaps of wurtzite ternary alloys Zn1−xMxO (M = Mg, Cd) and the band offsets of the ZnO/Zn1−xMxO heterojunctions, these II-VI materials are important for electronics and optoelectronics. Our calculation is based on density functional theory within the linear muffin-tin orbital (LMTO) approach where the modified Becke-Johnson (MBJ) semi-local exchange is used to accurately produce the band gaps, and the coherent potential approximation (CPA) is applied to deal with configurational average for the ternary alloys. The combined LMTO-MBJ-CPA approach allows one to simultaneously determine both the conduction band and valence band offsets of the heterojunctions. The calculated band gap data of the ZnO alloys scale as Eg = 3.35 + 2.33x and Eg = 3.36 − 2.33x + 1.77x2 for Zn1−xMgxO and Zn1−xCdxO, respectively, where x being the impurity concentration. These scaling as well as the composition dependent band offsets are quantitatively compared to the available experimental data. The capability of predicting the band parameters and band alignments of ZnO and its ternary alloys with the LMTO-CPA-MBJ approach indicate the promising application of this method in the design of emerging electronics and optoelectronics.
机译:我们报告了纤锌矿三元合金Zn1-xMxO(M = Mg,Cd)的计算基带隙和ZnO / Zn1-xMxO异质结的带隙,这些II-VI材料对于电子学和光电学很重要。我们的计算基于线性松饼-锡轨道(LMTO)方法中的密度泛函理论,其中使用改良的Becke-Johnson(MBJ)半局部交换来精确产生带隙,并且相干势近似(CPA)为用于处理三元合金的构型平均值。组合的LMTO-MBJ-CPA方法允许人们同时确定异质结的导带和价带偏移。对于Zn1-xMgxO和Zn1-xCdxO,计算得出的ZnO合金的带隙数据分别为Eg = 3.35 + 2.33x和Eg = 3.36-2.33x + 1.77x 2 x 是杂质浓度。将这些缩放比例以及与成分有关的频带偏移与可用的实验数据进行定量比较。利用LMTO-CPA-MBJ方法预测ZnO及其三元合金的能带参数和能带排列的能力表明,该方法在新兴电子和光电子学设计中的应用前景广阔。

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