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Order of magnitude enhancement of monolayer MoS2 photoluminescence due to near-field energy influx from nanocrystal films

机译:由于纳米晶体薄膜的近场能量流入单层MoS2光致发光的数量级增强

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摘要

Two-dimensional transition metal dichalcogenides (TMDCs) like MoS2 are promising candidates for various optoelectronic applications. The typical photoluminescence (PL) of monolayer MoS2 is however known to suffer very low quantum yields. We demonstrate a 10-fold increase of MoS2 excitonic PL enabled by nonradiative energy transfer (NRET) from adjacent nanocrystal quantum dot (NQD) films. The understanding of this effect is facilitated by our application of transient absorption (TA) spectroscopy to monitor the energy influx into the monolayer MoS2 in the process of ET from photoexcited CdSe/ZnS nanocrystals. In contrast to PL spectroscopy, TA can detect even non-emissive excitons, and we register an order of magnitude enhancement of the MoS2 excitonic TA signatures in hybrids with NQDs. The appearance of ET-induced nanosecond-scale kinetics in TA features is consistent with PL dynamics of energy-accepting MoS2 and PL quenching data of the energy-donating NQDs. The observed enhancement is attributed to the reduction of recombination losses for excitons gradually transferred into MoS2 under quasi-resonant conditions as compared with their direct photoproduction. The TA and PL data clearly illustrate the efficacy of MoS2 and likely other TMDC materials as energy acceptors and the possibility of their practical utilization in NRET-coupled hybrid nanostructures.
机译:像MoS2这样的二维过渡金属二硫化碳(TMDC)有望用于各种光电应用。但是,已知单层MoS2的典型光致发光(PL)具有非常低的量子产率。我们证明了通过相邻纳米晶体量子点(NQD)膜的非辐射能量转移(NRET)可以使MoS2激子PL增长10倍。我们应用瞬态吸收(TA)光谱来监测光激发的CdSe / ZnS纳米晶体在ET过程中进入单层MoS2的能量流入,有助于对此效应的理解。与PL光谱法相反,TA甚至可以检测非发射性激子,并且我们在与NQD的混合体中记录了MoS2激子TA签名的数量级增强。 ET诱导的纳秒尺度动力学在TA特征中的出现与能量接受的MoS2的PL动力学以及能量提供的NQD的PL猝灭数据一致。观察到的增强归因于与准直接条件相比,准共振条件下逐渐转移到MoS2中的激子的重组损失减少。 TA和PL数据清楚地说明了MoS2和其他可能的TMDC材料作为能量受体的功效以及它们在NRET偶联的杂化纳米结构中实际应用的可能性。

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