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Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3

机译:SrxBi2Se3中非磁性S掺杂对拓扑表面态的降解

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摘要

Research on possible topological superconductivity has grown rapidly over the past several years, from fundamental studies to the development of next generation technologies. Recently, it has been reported that the SrxBi2Se3 exhibits superconductivity with topological surface state, making this compound a promising candidate for investigating possible topological superconductivity. However, whether or not the topological surface state is robust against impurities is not clear in this system. Here we report a detailed investigation on the lattice structure, electronic and magnetic properties, as well as the topological superconducting properties of SrxBi2Se3−ySy samples. It is found that the superconducting transition temperature keeps nearly unchanged in all samples, despite of a gradual decrease of the superconducting shielding volume fraction with increasing S doping content. Meanwhile, the Shubnikov-de Hass oscillation results of the SrxBi2Se3−ySy samples reveal that the topological surface states are destroyed in S doped samples, suggesting the topological character is degraded by nonmagnetic dopants.
机译:在过去的几年中,从基础研究到下一代技术的发展,对可能的拓扑超导性的研究发展迅速。最近,有报道说SrxBi2Se3具有拓扑表面状态的超导性,使该化合物成为研究可能的拓扑超导性的有希望的候选者。然而,在该系统中尚不清楚拓扑表面状态是否对杂质具有鲁棒性。在这里,我们报告了对SrxBi2Se3-ySy样品的晶格结构,电子和磁性以及拓扑超导特性的详细研究。已发现,尽管随着S掺杂含量的增加,超导屏蔽体积分数逐渐降低,但所有样品的超导转变温度几乎保持不变。同时,SrxBi2Se3-ySy样品的Shubnikov-de Hass振荡结果表明,S掺杂样品中的拓扑表面状态被破坏,这表明非磁性掺杂剂会降低拓扑特性。

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