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Photo-reactive charge trapping memory based on lanthanide complex

机译:基于镧系元素络合物的光反应电荷俘获记忆

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摘要

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.
机译:光致激子的传统利用是普遍的,但是在光伏器件以及光检测器的领域中受到限制,并且一直在努力扩大其功能。但是,关于使用光感应电荷的有机场效应晶体管(OFET)存储器的报道很少。在这里,我们展示了一种含有新型有机镧系元素Eu(tta)3ppta(Eu(tta)3 =三氟丙酮酸((III),ppta = 2-苯基-4,6-双(吡唑-1-基)- 1,3,5-triazine),其中光诱导的电荷可以成功地捕获和释放。发光络合物在紫外线(UV)激发时发出强烈的红色发射,并用作从并五苯半导体层注入的空穴的俘获元素。通过光辅助编程和擦除程序可以显着扩大存储窗口,在此过程中,半导体层中的光致激子会被电压偏置分开。记忆窗的增强归因于紫外光引起的光诱导激子数量的增加。消除电压偏置后,电荷在该发光复合物中的存储时间至少为10 4 s。光辅助新型存储器的当前研究可能会激发对新型光可调电荷俘获光反应性存储器件的研究。

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