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Surface Characteristics of Silicon Nanowires/Nanowalls Subjected to Octadecyltrichlorosilane Deposition and n-octadecane Coating

机译:十八烷基三氯硅烷沉积和正十八烷涂层对硅纳米线/纳米壁的表面特性

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摘要

In this study, nanowiresanowalls were generated on a silicon wafer through a chemical etching method. Octadecyltrichlorosilane (OTS) was deposited onto the nanowireanowall surfaces to alter their hydrophobicity. The hydrophobic characteristics of the surfaces were further modified via a 1.5-μm-thick layer of n-octadecane coating on the OTS-deposited surface. The hydrophobic characteristics of the resulting surfaces were assessed using the sessile water droplet method. Scratch and ultraviolet (UV)-visible reflectivity tests were conducted to measure the friction coefficient and reflectivity of the surfaces. The nanowires formed were normal to the surface and uniformly extended 10.5 μm to the wafer surface. The OTS coating enhanced the hydrophobic state of the surface, and the water contact angle increased from 27° to 165°. The n-octadecane coating formed on the OTS-deposited nanowiresanowalls altered the hydrophobic state of the surface. This study provides the first demonstration that the surface wetting characteristics change from hydrophobic to hydrophilic after melting of the n-octadecane coating. In addition, this change is reversible; i.e., the hydrophilic surface becomes hydrophobic after the n-octadecane coating solidifies at the surface, and the process again occurs in the opposite direction after the n-octadecane coating melts.
机译:在这项研究中,纳米线/纳米壁是通过化学蚀刻方法在硅晶片上生成的。十八烷基三氯硅烷(OTS)沉积到纳米线/纳米壁表面以改变其疏水性。表面的疏水特性通过在OTS沉积表面上的1.5微米厚的正十八烷涂层的层进一步修饰。使用无水水滴法评估所得表面的疏水特性。进行了划痕和紫外线(UV)可见反射率测试,以测量表面的摩擦系数和反射率。形成的纳米线垂直于表面,并均匀地延伸至晶片表面10.5μm。 OTS涂层增强了表面的疏水状态,并且水接触角从27°增加到165°。在OTS沉积的纳米线/纳米壁上形成的正十八烷涂层改变了表面的疏水状态。这项研究首次证明了正十八烷涂层熔化后,表面润湿特性从疏水性变为亲水性。另外,这种变化是可逆的。即,在正十八烷涂层在表面固化之后,亲水性表面变为疏水性,并且在正十八烷涂层熔融之后,该过程再次在相反的方向上发生。

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