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An Analytic Approach for Optimal Geometrical Design of GaAs Nanowires for Maximal Light Harvesting in Photovoltaic Cells

机译:GaAs纳米线最佳几何设计的解析方法用于光伏电池的最大光收集

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摘要

Semiconductor nanowires(NWs) with subwavelength scale diameters have demonstrated superior light trapping features, which unravel a new pathway for low cost and high efficiency future generation solar cells. Unlike other published work, a fully analytic design is for the first time proposed for optimal geometrical parameters of vertically-aligned GaAs NW arrays for maximal energy harvesting. Using photocurrent density as the light absorbing evaluation standard, 2 μm length NW arrays whose multiple diameters and periodicity are quantitatively identified achieving the maximal value of 29.88 mA/cm2 under solar illumination. It also turns out that our method has wide suitability for single, double and four different diameters of NW arrays for highest photon energy harvesting. To validate this analytical method, intensive numerical three-dimensional finite-difference time-domain simulations of the NWs’ light harvesting are also carried out. Compared with the simulation results, the predicted maximal photocurrent densities lie within 1.5% tolerance for all cases. Along with the high accuracy, through directly disclosing the exact geometrical dimensions of NW arrays, this method provides an effective and efficient route for high performance photovoltaic design.
机译:具有亚波长标度直径的半导体纳米线(NW)已显示出卓越的光捕获特性,这为低成本和高效率的下一代太阳能电池开辟了一条新途径。与其他已发表的工作不同,首次提出了一种完全分析设计,用于垂直对准的GaAs NW阵列的最佳几何参数,以实现最大的能量收集。以光电流密度为光吸收评价标准,定量确定了多个直径和周期性的2μm长NW阵列,在太阳光照射下达到29.88μmA/ cm 2 的最大值。事实也证明,我们的方法对单,双和四个不同直径的NW阵列具有广泛的适用性,以获取最高的光子能量。为了验证这种分析方法,还对西北农村地区的光收集进行了密集的三维三维有限差分时域模拟。与仿真结果相比,在所有情况下,预测的最大光电流密度均在1.5%的容差范围内。随着精度的提高,通过直接公开NW阵列的精确几何尺寸,该方法为高性能光伏设计提供了有效途径。

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