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Formation Microstructure and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System

机译:新型Ga2S3-Sb2S3-AgI硫族化物体系的形成微结构和电导率

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摘要

Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S3 contents. The Ga2S3-Sb2S3-AgI glasses possess a wide region of transmission window (0.65−14 μm). An ionic conductivity of approximately 1.01 × 10−3 S/cm can be obtained for a 40 (0.8Sb2S3-0.2Ga2S3)-60AgI glass at an ambient temperature, and the ionic conductivity increased as temperature increased. The relative activation energy of Ag+ conduction was also calculated. These novel glasses show potential for the combined application of infrared optics and solid electrolytes.
机译:用熔融淬火法制备了Ga2S3-Sb2S3-AgI体系中的新型玻璃,并确定了它们的玻璃形成区域。玻璃中可溶解的最大AgI为65 mol%。研究了玻璃的热,光学和结构性质与AgI和Ga2S3含量的关系。 Ga2S3-Sb2S3-AgI玻璃具有较宽的透射窗口区域(0.65-14μm)。在环境温度下,对于40(0.8Sb2S3-0.2Ga2S3)-60AgI玻璃,可以获得约1.01××10 10 s-3的离子电导率,并且离子电导率随温度升高而增加。还计算了Ag + 传导的相对活化能。这些新颖的玻璃具有将红外光学元件和固体电解质结合起来使用的潜力。

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