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Microstructural control suppresses thermal activation of electron transport at room temperature in polymer transistors

机译:微结构控制可抑制室温下聚合物晶体管中电子传输的热活化

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摘要

Recent demonstrations of inverted thermal activation of charge mobility in polymer field-effect transistors have excited the interest in transport regimes not limited by thermal barriers. However, rationalization of the limiting factors to access such regimes is still lacking. An improved understanding in this area is critical for development of new materials, establishing processing guidelines, and broadening of the range of applications. Here we show that precise processing of a diketopyrrolopyrrole-tetrafluorobenzene-based electron transporting copolymer results in single crystal-like and voltage-independent mobility with vanishing activation energy above 280 K. Key factors are uniaxial chain alignment and thermal annealing at temperatures within the melting endotherm of films. Experimental and computational evidences converge toward a picture of electrons being delocalized within crystalline domains of increased size. Residual energy barriers introduced by disordered regions are bypassed in the direction of molecular alignment by a more efficient interconnection of the ordered domains following the annealing process.
机译:聚合物场效应晶体管中电荷迁移率的反向热激活的最新证明激发了人们对不受热障限制的传输方式的兴趣。但是,仍然缺乏合理的限制因素来使用这种制度。对该领域的深入了解对于开发新材料,建立加工准则以及扩大应用范围至关重要。在这里我们表明,对二酮吡咯并吡咯-四氟苯基电子传输共聚物的精确加工导致单晶状和电压无关的迁移率,活化能在280 K以上消失,关键因素是单轴链排列和熔融吸热温度下的热退火。电影。实验和计算证据都趋向于电子在尺寸增大的晶域内发生离域的图片。在退火过程之后,通过有序域的更有效互连,无序区域引入的残余能垒会在分子排列的方向上被绕开。

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