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Electrical detection of current generated spin in topological insulator surface states: Role of interface resistance

机译:拓扑绝缘子表面状态下电流产生的自旋的电学检测:界面电阻的作用

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摘要

Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization of the ferromagnet is measured as a voltage. However, opposing signs of the spin voltage have been reported, which had been tentatively attributed to the coexistence of trivial two-dimensional electron gas states on the TI surface which may exhibit opposite current-induced polarization than that of the TI Dirac surface states. Models based on electrochemical potential have been presented to determine the sign of the spin voltage expected for the TI surface states. However, these models neglect critical experimental parameters which also affect the sign measured. Here we present a Mott two-spin current resistor model which takes into account these parameters such as spin-dependent interface resistances, and show that such inclusion can lead to a crossing of the voltage potential profiles for the spin-up and spin-down electrons within the channel, which can lead to measured spin voltages of either sign. These findings offer a resolution of the ongoing controversy regarding opposite signs of spin signal reported in the literature, and highlight the importance of including realistic experimental parameters in the model.
机译:最近已经使用铁磁体/隧道势垒触点检测到由于自旋动量锁定而在拓扑绝缘体(TI)表面状态下产生的自旋极化电流,其中TI自旋在铁磁体的磁化强度上的投影被测量为电压。然而,已经报道了自旋电压的相反符号,这暂时地归因于TI表面上琐碎的二维电子气态的共存,其可能表现出与TI Dirac表面态相反的电流感应极化。已经提出了基于电化学势的模型来确定TI表面态所期望的自旋电压的符号。但是,这些模型忽略了关键的实验参数,这些参数也影响所测符号。在这里,我们提出了一个Mott两轴电流电阻器模型,该模型考虑了这些参数,例如与自旋相关的界面电阻,并且表明这种包含可能导致自旋向上和自旋向下电子的电压电势曲线交叉在通道内,这可能导致测得的自旋电压为正负号。这些发现为文献中报道的有关自旋信号相反迹象的持续争议提供了解决方案,并突出了在模型中包括实际实验参数的重要性。

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