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Nanometric holograms based on a topological insulator material

机译:基于拓扑绝缘体材料的纳米全息图

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摘要

Holography has extremely extensive applications in conventional optical instruments spanning optical microscopy and imaging, three-dimensional displays and metrology. To integrate holography with modern low-dimensional electronic devices, holograms need to be thinned to a nanometric scale. However, to keep a pronounced phase shift modulation, the thickness of holograms has been generally limited to the optical wavelength scale, which hinders their integration with ultrathin electronic devices. Here, we break this limit and achieve 60 nm holograms using a topological insulator material. We discover that nanometric topological insulator thin films act as an intrinsic optical resonant cavity due to the unequal refractive indices in their metallic surfaces and bulk. The resonant cavity leads to enhancement of phase shifts and thus the holographic imaging. Our work paves a way towards integrating holography with flat electronic devices for optical imaging, data storage and information security.
机译:全息术在常规光学仪器中具有极其广泛的应用,涵盖光学显微镜和成像,三维显示和计量学。为了将全息图与现代低维电子设备集成在一起,需要将全息图稀化至纳米级。然而,为了保持明显的相移调制,全息图的厚度通常被限制在光学波长范围内,这阻碍了它们与超薄电子设备的集成。在这里,我们突破了这个限制,使用拓扑绝缘体材料获得了60 nm全息图。我们发现纳米拓扑绝缘体薄膜由于其金属表面和整体中的折射率不相等而充当了固有的光学谐振腔。谐振腔导致相移的增强,从而导致全息成像的增强。我们的工作为将全息技术与用于光学成像,数据存储和信息安全的平面电子设备集成铺平了道路。

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