首页> 美国卫生研究院文献>Journal of Applied Physics >Domain size engineering in tetragonal Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 crystals
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Domain size engineering in tetragonal Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 crystals

机译:四方Pb(In1 ∕ 2Nb1 ∕ 2)O3-Pb(Mg1 ∕ 3Nb2 ∕ 3)O3-PbTiO3晶体的畴尺寸工程

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摘要

The effect of domain size on the dielectric and piezoelectric properties of [111]-oriented tetragonal Pb(In1∕2Nb1∕2)O3-Pb(Mg1∕3Nb2∕3)O3-PbTiO3 crystals was investigated. The dielectric permittivity (ɛ33 T∕ɛ0) and piezoelectric coefficient (d33) were found to be on the order of 13 800 and 1630 pC∕N, respectively, for samples with domain size of ∼500 nm, a 3-fold increase to crystals with domain size of ∼50 μm. Rayleigh analysis revealed that the extrinsic contribution to the piezoelectric response increased from ∼8% to 30% with decreasing domain size, due to the increased domain wall density and associated irreversible domain wall motion. The enhanced properties were thought to relate to the fine domain structures, however, showing a poor electric field and temperature stabilities with domain size of 500 nm. Of particular significance is that samples with domain size being on the order of 5 μm exhibit field and temperature stabilities, with yet high piezoelectric properties, make it potential for transducer applications.
机译:研究了畴尺寸对[111]取向四方Pb(In1 ∕ 2Nb1 ∕ 2)O3-Pb(Mg1 ∕ 3Nb2 ∕ 3)O3-PbTiO3晶体介电和压电性能的影响。对于域尺寸约为500 nm的样品,其介电常数(ɛ33 T ∕ɛ0)和压电系数(d33)分别约为13800 pC ∕ N和1630 pC ∕ N。晶体尺寸增加了3倍,畴尺寸约为50μm。瑞利(Rayleigh)分析显示,由于畴壁密度的增加和相关的不可逆畴壁运动,随着压电畴尺寸的减小,外在对压电响应的贡献从8%增加到30%。增强的性能被认为与精细的畴结构有关,但是,在畴尺寸为500 showingnm时,显示出较差的电场和温度稳定性。特别重要的是,畴尺寸在5μm量级的样品具有良好的压电性能,因此具有良好的场和温度稳定性,使其具有潜在的换能器应用前景。

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