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Synaptic Conductance Estimates of the Connection Between Local Inhibitor Interneurons and Pyramidal Neurons in Layer 2/3 of a Cortical Column

机译:皮层柱的2/3层中局部抑制剂中间神经元和锥体神经元之间的连接的突触电导估计。

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摘要

Stimulation of a principal whisker yields sparse action potential (AP) spiking in layer 2/3 (L2/3) pyramidal neurons in a cortical column of rat barrel cortex. The low AP rates in pyramidal neurons could be explained by activation of interneurons in L2/3 providing inhibition onto L2/3 pyramidal neurons. L2/3 interneurons classified as local inhibitors based on their axonal projection in the same column were reported to receive strong excitatory input from spiny neurons in L4, which are also the main source of the excitatory input to L2/3 pyramidal neurons. Here, we investigated the remaining synaptic connection in this intracolumnar microcircuit. We found strong and reliable inhibitory synaptic transmission between intracolumnar L2/3 local-inhibitor-to-L2/3 pyramidal neuron pairs [inhibitory postsynaptic potential (IPSP) amplitude −0.88 ± 0.67 mV]. On average, 6.2 ± 2 synaptic contacts were made by L2/3 local inhibitors onto L2/3 pyramidal neurons at 107 ± 64 µm path distance from the pyramidal neuron soma, thus overlapping with the distribution of synaptic contacts from L4 spiny neurons onto L2/3 pyramidal neurons (67 ± 34 µm). Finally, using compartmental simulations, we determined the synaptic conductance per synaptic contact to be 0.77 ± 0.4 nS. We conclude that the synaptic circuit from L4 to L2/3 can provide efficient shunting inhibition that is temporally and spatially aligned with the excitatory input from L4 to L2/3.
机译:主须晶的刺激会在大鼠桶状皮质皮层的2/3(L2 / 3)层锥体神经元中产生稀疏的动作电位(AP)。锥体神经元的低AP率可以通过激活L2 / 3中的中间神经元来抑制L2 / 3锥体神经元来解释。据报道,根据它们在同一列中的轴突投影被分类为局部抑制剂的L2 / 3中间神经元从L4的多刺神经元接收到强烈的兴奋性输入,这也是L2 / 3锥体神经元的兴奋性输入的主要来源。在这里,我们调查了此柱内微电路中剩余的突触连接。我们发现在列内L2 / 3局部抑制剂到L2 / 3锥体神经元对之间有强而可靠的抑制性突触传递[抑制性突触后电位(IPSP)振幅-0.88±0.67 mV]。平均而言,L2 / 3局部抑制剂在距锥体神经元躯体107±64 µm路径距离处的L2 / 3锥体神经元上产生6.2±2个突触接触,从而与L4棘突神经元到L2 / 3上的突触接触分布重叠。 3个锥体神经元(67±34 µm)。最后,使用隔室模拟,我们确定每个突触接触的突触电导为0.77±0.4 nS。我们得出结论,从L4到L2 / 3的突触电路可以提供有效的分流抑制,该抑制在时间和空间上与从L4到L2 / 3的兴奋性输入对齐。

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